BF1207,115 datasheet

Маркировка

BF1207,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF1207,115 Configuration: Dual Dual Gate Continuous Drain Current: 30 mA Current - Test: 18mA Current Rating: 30mA Drain-source Breakdown Voltage: 6 V Frequency: 400MHz Gain: 30dB Gate-source Breakdown Voltage: 6 V ID_COMPONENTS: 1949188 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 1.3dB Package / Case: SC-70-6, SC-88, SOT-363 Power - Output: - Power Dissipation: 180 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Rated: 6V Voltage - Test: 5V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 6 V Gate-Source Breakdown Voltage: 6 V Factory Pack Quantity: 3000 Part # Aliases: BF1207 T/R Other Names: 934058936115, BF1207 T/R
Количество страниц

22 шт.
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169,86 KB